Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
arXiv:cond-mat/0310107 · doi:10.1016/j.spmi.2004.02.003
Abstract
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.