The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$
arXiv:cond-mat/0309082 · doi:10.1063/1.1622994
Abstract
Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si$_{(1-x)}$Ge$_x$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).
5 pages, 4 figures, 3 tables, 2 authors, and a logo. v2 improved referencing