Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells
arXiv:cond-mat/0308420 · doi:10.1016/j.ssc.2003.08.022
Abstract
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.
3 pages, 3 figures