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paper

Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

arXiv:cond-mat/0308420 · doi:10.1016/j.ssc.2003.08.022

Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

3 pages, 3 figures