Field-Effect Transistors on Tetracene Single Crystals
arXiv:cond-mat/0307320 · doi:10.1063/1.1629144
Abstract
We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.
Accepted by Appl. Phys. Lett, tentatively scheduled for publication in the November 24, 2003 issue