Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields
arXiv:cond-mat/0304258 · doi:10.1142/S021797920301834X
Abstract
A detailed theoretical study is presented for the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for 1s and 2p states on intensity and frequency of the THz radiation has been examined.
14 pages, 4 figures