A Field-Effect-Transistor from Graphite: No Effect of Low Gate Fields
arXiv:cond-mat/0304105
Abstract
Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor based on graphite. A relatively thick layer of boron nitride turned out to be able to serve as a gate dielectric. This, however, limits the achievable electric gate field, which might be the reason for our observation of no charge-doping effect.
3 pages, 3 figures, submitted to Europ. Phys. J. AP