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First order transition from correlated electron semiconductor to ferromagnetic metal in single crystalline FeSi1-xGex

arXiv:cond-mat/0302497 · doi:10.1103/PhysRevLett.91.046401

Abstract

The phase diagram of FeSi1-xGex, obtained from magnetic, thermal and transport measurements on single crystals, shows a first-order transition from a correlated electron semiconductor to a ferromagnetic metal at a critical concentration, x ~ 0.25. The gap of the insulating phase strongly decreases with x. The specific heat coefficient appears to track the density of states of a Kondo insulator. The phase diagram is consistent with a correlation induced insulator-metal transition in conjunction with disorder on the Si/Ge ligand site.