Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs
arXiv:cond-mat/0301301 · doi:10.1103/PhysRevB.68.241308
Abstract
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than $e^{2}/h$. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.
3 pages, 2 figures