Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields

Abstract

We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g-factor and a non-linear spin-polarization with field.

4 pages, 4 figures, Fig. 4 has been replaced from the previous version, minor changes in the text