Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films
arXiv:cond-mat/0212399 · doi:10.1063/1.1566097
Abstract
We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin.
9 pages, 3 figures