On Effective Electron Mass of Silicon MOSFET at Low Electron Density
arXiv:cond-mat/0211482 · doi:10.1134/1.1525041
Abstract
The trial wave function method developed in Ref.s \cite{gutz,brink} for the case of narrow {\it s}-band in a perfect crystal is adapted for calculation of the density dependence of the effective mass and the Lande factor in a dilute two-dimensional electron system. We find that the effective mass has a tendency to diverge at a certain critical concentration, whereas the $g$ factor remains finite.
5 pages, 2 figures. Published in JETP Letters