Negative Magnetoresistance Produced by Hall Fluctuations in a Ferromagnetic Domain Structure
arXiv:cond-mat/0101268 · doi:10.1063/1.1392978
Abstract
We present a model for a negative magnetoresistance (MR) that would develop in a material with many ferromagnetic domains even if the individual domains have no magnetoresistance and even if there is no boundary resistance. The negative MR is due to a classical current-distortion effect arising from spatial variations in the Hall conductivity, combined with a change in domain structure due to an applied magnetic field. The negative MR can exceed 1000% if the product of the carrier relaxation time and the internal magnetic field due to spontaneous magnetization is sufficiently large.
3 pages, submitted to Appl. Phys. Lett