Negative differential resistance in nanotube devices
arXiv:cond-mat/0010456 · doi:10.1103/PhysRevLett.85.4767
Abstract
Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for device integration.
4 pages, 4 figures, to appear in Physical Review Letters