Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon
arXiv:cond-mat/0007003 · doi:10.1016/S0038-1098(00)00361-6
Abstract
We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition.
4 pages, postscript figures included