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Interlayer tunneling in double-layer quantum Hall pseudo-ferromagnets

arXiv:cond-mat/0006450 · doi:10.1103/PhysRevLett.86.1825

Abstract

We show that the interlayer tunneling I--V in double-layer quantum Hall states displays a rich behavior which depends on the relative magnitude of sample size, voltage length scale, current screening, disorder and thermal lengths. For weak tunneling, we predict a negative differential conductance of a power-law shape crossing over to a sharp zero-bias peak. An in-plane magnetic field splits this zero-bias peak, leading instead to a ``derivative'' feature at $V_B(B_{||})=2π\hbar v B_{||}d/eϕ_0$, which gives a direct measure of the dispersion of the Goldstone mode corresponding to the spontaneous symmetry breaking of the double-layer Hall state.

4 pgs. RevTex, submitted to Phys. Rev. Lett