History dependence of peak effect in CeRu$_2$ and V$_3$Si: an analogy with the random field Ising systems
arXiv:cond-mat/0001009 · doi:10.1016/S0038-1098(00)00004-1
Abstract
We present results of transport measurements showing distinct path dependence of the electrical resistance in the superconducting vortex state of single crystal samples of CeRu$_2$ and V$_3$Si. Resistance measured in the vortex state of both the systems prepared by field cooling (FC), indicates a relatively higher degree of disorder than when it is prepared by isothermal variation of field. Small oscillations of magnetic field modify the resistance in the FC state, highlighting the metastable nature of that state. An analogy is drawn with the FC state of the random-field Ising systems.
Four pages of text and four figures. Accepted for publication in Solid State Communications