Enhancing electrical conductivity of room temperature deposited Sn-doped In$_2$O$_3$ thin films by hematite seed layers
arXiv:1907.02867 · doi:10.1063/1.5022683
Abstract
Hematite Fe$_2$O$_3$ seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to $Ï= 3300\,{\rm S/cm}$ are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.
5 pages, 3 figures