Noncollinearity-modulated electronic properties of the monolayer CrI$_3$

Abstract

Introducing noncollinear magnetization into a monolayer CrI$_3$ is proposed to be an effective approach to modulate the local electronic properties of the two-dimensional (2D) magnetic material. Using first-principles calculation, we illustrate that both the conduction and valence bands in the monolayer CrI$_3$ are lowered down by spin spiral states. The distinct electronic structure of the monolayer noncollinear CrI$_3$ can be applied in nanoscale functional devices. As a proof of concept, we show that a magnetic domain wall can form a one-dimensional conducting channel in the 2D semiconductor via proper gating. Other possible applications such as electron-hole separation and identical quantum dots are also discussed.