Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis
arXiv:1806.08628 · doi:10.1063/1.5045860
Abstract
Tunnel-injection lasers promise advantages in modulation bandwidth and temperature stability in comparison to conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection devices and a comparison to a conventional quantum-dot laser structure. In general, the modulation bandwidth of semiconductor lasers is affected by the steady-state occupations of electrons and holes via the presence of spectral hole burning. For tunnel-injection lasers with InGaAs quantum dot emitting at the telecom wavelength of 1,55$μ$m, we demonstrate that the absence of spectral hole burning favors this concept over conventional quantum-dot based lasers.
5 pages, 4 figures