First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC
arXiv:1806.01435 · doi:10.1016/j.nima.2019.04.037
Abstract
A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
20 pages, 19 figures