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Intra-Domain Periodic Defects in Monolayer MoS$_2$

arXiv:1705.03051 · doi:10.1063/1.4983789

Abstract

We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films.

To appear in Appl. Phys. Lett. 13 pages, 3 figures. Includes Supplementary Material