Physical properties of KMgBi single crystals
arXiv:1610.02699 · doi:10.1103/PhysRevB.95.035209
Abstract
KMgBi single crystals are grown by using the Bi flux successfully. KMgBi shows semiconducting behavior with a metal-semiconductor transition at high temperature region and a resistivity plateau at low temperature region, suggesting KMgBi could be a topological insulator with a very small band gap. Moreover, KMgBi exhibits multiband feature with strong temperature dependence of carrier concentrations and mobilities.
6 pages, 5 figures