Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

Abstract

Linear polarization angle, $θ$, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, $R_{xx}$, in high mobility GaAs/AlGaAs 2D electron devices have shown a $θ$ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, $θ_{0}$. Here, we suggest a microwave frequency dependence of $θ_{0} (f)$ using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.