Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation
arXiv:1601.01889 · doi:10.1063/1.4945090
Abstract
We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.
The following article has been submitted to Applied Physics Letters