Interaction driven metal-insulator transition in strained graphene
arXiv:1505.04188 · doi:10.1103/PhysRevLett.115.186602
Abstract
The question of whether electron-electron interactions can drive a metal to insulator transition in graphene under realistic experimental conditions is addressed. Using three representative methods to calculate the effective long-range Coulomb interaction between $Ï$-electrons in graphene and solving for the ground state using quantum Monte Carlo methods, we argue that without strain, graphene remains metallic and changing the substrate from SiO$_2$ to suspended samples hardly makes any difference. In contrast, applying a rather large -- but experimentally realistic -- uniform and isotropic strain of about $15\%$ seems to be a promising route to making graphene an antiferromagnetic Mott insulator.
Updated version: 6 pages, 3 figures