Strain-induced Giant Second-harmonic Generation in Monolayered $2H$-MoX$_2$ (X=S,Se,Te)
arXiv:1504.04936 · doi:10.1063/1.4938120
Abstract
Dynamic second-order nonlinear susceptibilities, $Ï^{(2)}(2Ï,Ï,Ï)\equiv Ï^{(2)}(Ï)$, are calculated here within a fully first-principles scheme for monolayered molybdenum dichalcogenides, $2H$-MoX$_2$ (X=S,Se,Te). The absolute values of $Ï^{(2)}(Ï)$ across the three chalcogens critically depend on the band gap energies upon uniform strain, yielding the highest $Ï^{(2)}(0)\sim$ 140 pm/V for MoTe$_2$ in the static limit. Under this uniform in-plane stress, $2H$-MoX$_2$ can undergo direct-to-indirect transition of band gaps, which in turn substantially affects $Ï^{(2)}(Ï)$. The tunability of $Ï^{(2)}(Ï)$ by either compressive or tensile strain is demonstrated especially for two important experimental wavelengths, 1064 nm and 800 nm, where resonantly enhanced non-linear effects can be exploited: $Ï^{(2)}$ of MoSe$_2$ and MoTe$_2$ approach $\sim$800 pm/V with -2\% strain at 1064 nm.
4 pages 4 figures,submitted to Phys. Rev. B, Accepted for Appl. Phys. Lett