Time-evolution of the GaAs(0 0 1) pre-roughening process
arXiv:1503.03809 · doi:10.1016/S0039-6028(03)00916-6
Abstract
The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.
8 pages, 4 figures