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Multicomponent fractional quantum Hall states with subband and spin degrees of freedom

arXiv:1501.06958 · doi:10.1103/PhysRevB.92.201101

Abstract

In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the crossing, the fractional quantum Hall states in the filling factor range $1<ν<3$ exhibit a remarkable sequence of pseudospin polarization transitions resulting from the interplay between the spin and subband degrees of freedom. The field positions of the transitions yield a new and quantitative measure of the composite Fermions' discrete energy level separations. Surprisingly, the separations are smaller when the electrons have higher spin-polarization.