High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes
arXiv:1410.8778 · doi:10.1063/1.4904715
Abstract
High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very obvious and followed the metallic electrode behavior of numerical simulations, while the theoretically predicted negative quantum capacitance was not observed, possibility due to the over-estimated or weakened interactions between the graphene nanoribbon and side-gate electrodes.