Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
arXiv:1410.6019 · doi:10.1063/1.4914007
Abstract
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.
as published. arXiv admin note: substantial text overlap with arXiv:1409.2712