Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks
arXiv:1312.1599 · doi:10.1063/1.4851240
Abstract
We report on the transport properties of an array of N about 30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H which can be both consistently described by quantum tunneling of phase slips.
accepted for publication on Appl. Phys. Lett