Gate-controlled ultraviolet photo-etching of graphene edges
arXiv:1311.3452 · doi:10.1063/1.4830226
Abstract
The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied, while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption, while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.
13 pages, 4 figures