Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals
arXiv:1307.6787 · doi:10.1088/1742-6596/438/1/012018
Abstract
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195--855 MeV.
11 pages, 8 Figures