Phase Diagrams for the $ν$ = 1/2 Fractional Quantum Hall Effect in Electron Systems Confined to Symmetric, Wide GaAs Quantum Wells

Abstract

We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The quasi-two-dimensional electron systems we study are confined to GaAs quantum wells with widths $W$ ranging from 41 to 96 nm and have variable densities in the range of $\simeq 4 \times 10^{11}$ to $\simeq 4 \times 10^{10}$ cm$^{-2}$. We present several experimental phase diagrams for the stability of the $ν=1/2$ FQHE in these quantum wells. In general, for a given $W$, the 1/2 FQHE is stable in a limited range of intermediate densities where it has a bilayer-like charge distribution; it makes a transition to a compressible phase at low densities and to an insulating phase at high densities. The densities at which the $ν=1/2$ FQHE is stable are larger for narrower quantum wells. Moreover, even a slight charge distribution asymmetry destabilizes the $ν=1/2$ FQHE and turns the electron system into a compressible state. We also present a plot of the symmetric-to-antisymmetric subband separation ($Δ_{SAS}$), which characterizes the inter-layer tunneling, vs density for various $W$. This plot reveals that $Δ_{SAS}$ at the boundary between the compressible and FQHE phases increases \textit{linearly} with density for all the samples. Finally, we summarize the experimental data in a diagram that takes into account the relative strengths of the inter-layer and intra-layer Coulomb interactions and $Δ_{SAS}$. We conclude that, consistent with the conclusions of some of the previous studies, the $ν=1/2$ FQHE observed in wide GaAs quantum wells with symmetric charge distribution is stabilized by a delicate balance between the inter-layer and intra-layer interactions, and is very likely described by a two-component ($Ψ_{311}$) state.

Accepted for publication in Phys. Rev. B