Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

Submitted to Physica Status Solidi - Rapid Research Letters Focus Issue on Semiconductor Nanowires