Effect of annealing on the superconducting properties of a-Nb(x)Si(1-x) thin films
arXiv:1304.4629 · doi:10.1103/PhysRevB.87.144514
Abstract
a-Nb(x)Si(1-x) thin films with thicknesses down to 25 à have been structurally characterized by TEM (Transmission Electron Microscopy) measurements. As-deposited or annealed films are shown to be continuous and homogeneous in composition and thickness, up to an annealing temperature of 500°C. We have carried out low temperature transport measurements on these films close to the superconductor-to-insulator transition (SIT), and shown a qualitative difference between the effect of annealing or composition, and a reduction of the film thickness on the superconducting properties of a-NbSi. These results question the pertinence of the sheet resistance R_square as the relevant parameter to describe the SIT.
9 pages, 12 figures