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Robustness of basal-plane antiferromagnetic order and the $J_{eff}=1/2$ state in single-layer iridate spin-orbit Mott insulators

arXiv:1212.5912 · doi:10.1103/PhysRevLett.110.117207

Abstract

The magnetic structure and electronic groundstate of the layered perovskite Ba2IrO4 have been investigated using x-ray resonant magnetic scattering (XRMS). Our results are compared with those for Sr2IrO4, for which we provide supplementary data on its magnetic structure. We find that the dominant, long-range antiferromagnetic order is remarkably similar in the two compounds, and that the electronic groundstate in Ba2IrO4, deduced from an investigation of the XRMS $L_3/L_2$ intensity ratio, is consistent with a $J_{eff}=1/2$ description. The robustness of these two key electronic properties to the considerable structural differences between the Ba and Sr analogues is discussed in terms of the enhanced role of the spin-orbit interaction in 5d transition metal oxides.