Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
arXiv:1202.1560 · doi:10.1063/1.4704561
Abstract
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.
4 pages, 4 figures