Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface
arXiv:1110.1242 · doi:10.1016/j.jmmm.2011.09.031
Abstract
We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.
14 pages, 3 figures, accepted to Journal of Magnetism and Magnetic Materials