Anomalous Hall effect in the Co-based Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl

Abstract

The anomalous Hall effect (AHE) in the Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity $ρ_{xx}$ as well as the anomalous Hall resistivity $ρ_{ahe}$. Analyzing the scaling behavior of $ρ_{ahe}$ in terms of $ρ_{xx}$ points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.