Preparation and ferroelectric properties of (124)-oriented SrBi4Ti4O15 ferroelectric thin film on (110)-oriented LaNiO3 electrode
arXiv:1109.4191 · doi:10.1007/s10854-007-9444-9
Abstract
A (124)-oriented SrBi4Ti4O15 (SBTi) ferroelectric thin film with high volume fraction of αSBTi(124)=97% was obtained using a metal organic decomposition process on SiO2/Si substrate coated by (110)-oriented LaNiO3 (LNO) thin film. The remanent polarization and coercive field for (124)-oriented SBTi film are 12.1 μC/cm2 and 74 kV/cm, respectively. No evident fatigue of (124)-oriented SBTi thin film can be observed after 1{\times}10e9 switching cycles. Besides, the (124)-oriented SBTi film can be uniformly polarized over large areas using a piezoelectric-mode atomic force microscope. Considering that the annealing temperature was 650°C and the thickness of each deposited layer was merely 30 nm, a long-range epitaxial relationship between SBTi(124) and LNO(110) facets was proposed. The epitaxial relationship was demonstrated based on the crystal structures of SBTi and LNO.
11 pages, 4 figures, published in Journal of Materials Science: Materials in Electronics (JMSE), 19 (2008), 1031-1034