Limits on electron quality in suspended graphene due to flexural phonons
arXiv:1008.2522 · doi:10.1103/PhysRevLett.105.266601
Abstract
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases quadratically with $T$. Flexural phonons limit the intrinsic mobility down to a few $\text{m}^2/\text{Vs}$ at room $T$. Their effect can be eliminated by applying strain or placing graphene on a substrate.
4 pages, 3 figures