Nanostructures in p-GaAs with improved tunability
arXiv:1005.4799 · doi:10.1063/1.3463465
Abstract
A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.
4 pages, 4 figures