Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon
arXiv:1003.4339 · doi:10.1103/PhysRevB.81.161203
Abstract
The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.
4 pages, 3 figures