Thermal shot noise in top-gated single carbon nanotube field effect transistors
arXiv:1002.0706 · doi:10.1063/1.3425889
Abstract
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dimensional nano-transistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of $13\mathrm{μe/\sqrt{Hz}}$ in the 0.2-$0.8 \mathrm{GHz}$ band.
3 pages, 4 figures