Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon
arXiv:0912.0711 · doi:10.1209/0295-5075/88/57006
Abstract
Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with the period of the order of ten nanometers. Bumps in the dR/dH versus H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.
accepted for publication on epl