Field-induced carrier delocalization in the strain-induced Mott insulating state of an organic superconductor

Abstract

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for activated transport $σ_{\Box} = σ_{0}\exp(-W/k_{B}T)$, where $σ_{0}$ is a constant and $W$ depends on the gate voltage. The gate voltage dependence of the Hall coefficient shows that, unlike in conventional FETs, the effective mobility of dense hole carriers ($\sim1.6\times 10^{14}$ cm$^{-2}$) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation.

5 pages, 3 figures