Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation
arXiv:0903.4271 · doi:10.1103/PhysRevB.79.235407
Abstract
The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail.
13 pages, 8 figures