Formation of Epitaxial MnBi Layers on (Ga,Mn)As
arXiv:0903.1266 · doi:10.1103/PhysRevB.80.075204
Abstract
The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before clear surface degradation occurs.
18 pages, 5 figures