Excess dissipation in a single-electron box: The Sisyphus resistance

Abstract

We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

5 pages, 3 figures